Investigating the Effects of Doping, Pocket Geometry, and Orientation on Quantum Dot Laser Performance

Quantum dot lasers are used in a broad range of applications in everyday life, from medical imaging to telecommunications. Their impact in various fields shows their importance in the progression of modern technology. However, when it comes to high-temperature environments like inside data centers, laser performance tends to decline, making them impractical. Our goal is to optimize the design parameters for more efficient, high-performing, and reliable laser devices that can be integrated on the limited space of a photonic circuit chip. To achieve this, we use a “pocket laser” configuration to study the variables of doping, pocket geometry, and orientation. After the fabrication of the devices, electrical, optical, and thermal measurements were conducted to analyze the relative performance of each laser variation. Devices with 5-holes-per-dot doping, a horizontal [1-10] crystal orientation, and 300 µm pocket width functioned up to a temperature of 100 °C with up to 16.92% higher optical power output compared to prior 50 µm pocket designs.

Project Mentor: Rosalyn Koscica

Faculty Mentor: John Bowers